MindMap Gallery Optoelectronic devices and technology
This is a mind map about optoelectronic devices and technology, including basic knowledge in photoelectric detection applications, common light sources in photoelectric detection, junction optoelectronic devices, etc.
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Optoelectronic devices and technology
Chapter 1 Basic knowledge in photoelectric detection applications
Basic concepts of radiometry and photometry
Radiation (radiant energy) flux definition:
For the propagation of electromagnetic waves, the definition of radiant power is the radiant energy passing through a certain section per unit time.
Definition of radiation intensity:
Radiation characteristics of point radiators in different directions
Radiation brightness (or radiance) definition:
For a small-area surface radiation source, the radiance Le is used to represent the radiation characteristics of different locations on the surface in different directions.
The definition of radiation:
The radiant flux radiated per unit area of a surface radiation source
Irradiance definition:
Represents the radiant flux received by each unit of the illuminated surface
Luminous flux:
In order to quantitatively describe the stimulation intensity of electromagnetic radiation on vision, a new physical quantity is introduced, called luminous flux, also called optical power.
Definition of luminous intensity of point light source:
The luminous flux emitted by a point light source in a given direction within unit solid angle
Brightness definition
For a small-area surface light source, brightness is used to represent the radiation characteristics of different locations on the surface in different directions.
Light emission:
The luminous flux radiated by a surface light source from a unit area
Illumination:
The luminous flux incident on unit area is called illuminance
The formation of energy bands
An electron energy level is split into N new closely spaced energy levels due to the action of N atomic nuclei. The energy difference between these N new energy levels is very small, and the value of N is very large, so these N energy levels Almost connected together to form an energy band with a certain width
energy band structure
The energy band that is allowed to be occupied by electrons is called the allowed band. The range between the allowed bands is not allowed to be occupied by electrons. This range is called the forbidden band. The allowed band that is filled with electrons is called the full band. The outermost electron in the atom is called For valence electrons, the energy band formed by the splitting of this shell is called the valence band. The allowed band with higher energy than the valence band is called the conduction band; the energy band with no electrons entering is called the empty band.
black body radiation law
If the absorption ratio of an object to incident radiant energy of any wavelength is equal to 1 at any temperature, then the object is called an absolute black body
photoelectric effect
photoelectric effect
Photoconductivity effect
photovoltaic effect
external photoelectric effect
Noise and characteristic parameters of photodetectors
Noise classification
photon noise
Noise generated by signal radiation
Noise from background radiation
detector noise
thermal noise
shot noise
Generate - composite noise
1/f noise
temperature noise
Signal amplification and processing circuit noise
Characteristic parameters
Response rate (responsiveness)
Spectral responsivity (applicable wavelength range)
Equivalent noise power (noise equivalent power)
Detection rate and specific detection rate
Time constant (response time)
Linear
quantum efficiency
Chapter 2 Commonly used light sources in photoelectric detection
Characteristic parameters of light source
radiation efficiency
Luminous efficiency
Spectral power distribution
light source color
color chart
color rendering
Color temperature of light source
color temperature
Correlated color temperature
Distribution temperature
thermal radiation source
sun
Blackbody simulator (absorption ratio equal to 1, radiation source capable of emitting all wavelengths - absolute blackbody)
incandescent lamp
Gas discharge light source (gas lamp - using the principle of discharge)
1. High luminous efficiency
2. Since it does not rely on filaments to emit light, the electrodes can be made strong, compact, shock-resistant, and impact-resistant.
3. Long life, generally 2 to 10 times longer than incandescent lamps
4. The light color has strong adaptability and can be selected in a wide range
laser
Laser principle
Spontaneous emission, stimulated absorption and stimulated emission
Einstein's A and B coefficients
Necessary conditions for laser generation
Particle number inversion
Optical pump
resonant cavity
Laser structure
working substance
resonant cavity
pump source
Type of laser
gas laser
solid laser
dye laser
A semiconductor laser
Chapter 3 Junction Optoelectronic Devices
Working principle of junction optoelectronic devices
silicon photovoltaic cells
solar photovoltaic cell
Measuring photocells
silicon phototransistor
PNP type, PNP type is called 3CU silicon phototransistor
NPN type, NPN type is called 3DU type silicon phototransistor
Special junction optoelectronic devices
quadrant detector
PIN type photodiode
Special structure PIN photodiode
Photoelectric Position Sensor (PSD)
Avalanche Photodiode (APD)
UV photodiode
Junction optoelectronic devices
Optocoupler device
The circuit of the optocoupler consists of two parts: drive and output
Chapter 4 Photoconductive Devices
Main characteristic parameters of electrophotoresistor
Photoconductivity sensitivity Sg
Photoconductivity gain M
quantum efficiency
Spectral response rate and spectral response curve
Response time and frequency characteristics
Optoelectronic properties and gamma value
antecedent effect
Temperature characteristics
Characteristics of photoresistor (compared to junction type)
(1) The photoelectric conversion occurs in different parts of the photoresistor. Regardless of which part receives light, the conductivity of the light-receiving part increases;
(2) The photoresistor has no polarity and any voltage can be applied during operation.
(3) The photoconductivity effect of the photoresistor mainly depends on the generation and recombination movement of non-equilibrium carriers, with a large time constant and poor frequency response;
(4) Some junction photoelectric devices, such as phototransistors, avalanche photodiodes, etc., have a large internal gain effect, so they have higher sensitivity and can also pass larger currents.
Common photoresistor
Cadmium sulfide (CdS) photoresistor
Lead sulfide (PbS) photoresistor
Indium antimonide (InSb) photoresistor
Lead tin tellurium (PbSnTe) series photoresistor
Chapter 5 Vacuum Optoelectronic Devices
Photocathode
Objects that can produce photoelectric emission effects are called photoelectric emitters. Photoelectric emitters are often connected to the cathode in optoelectronic devices, so they are also called photocathode.
Main parameters of photocathode
Sensitivity
quantum efficiency
Spectral response curve
Thermionic emission
Classification of photocathode
Transmissive type
Reflective
Phototubes and photomultiplier tubes
Photocell
Glass bulb (light window)
Photocathode
anode
photomultiplier tube
Mainly by the entrance window
Photocathode
Electronic optical system
electron multiplication system
anode
Main characteristic parameters of photomultiplier tube
Sensitivity
dark current
noise
Linear
stability
hysteresis effect
Voltampere characteristics
time characteristics
Magnetic field characteristics
Applications of photomultiplier tubes
Spectral measurement
Detection of extremely weak light signals - photon counting
detection of rays
Chapter 6 Vacuum Imaging Devices
like tube
Like tube definition
Including image change tube and image intensifier, both have the functions of spectral conversion, image enhancement and imaging
like tube structure
Photocathode
electronic lens
electro-optical conversion
Characteristic parameters of image tube
Spectral response characteristics and spectral matching
Equivalent background illumination
resolution
Common image tubes
Infrared image tube
UV variable tube
Gated image change tube
Common image intensifiers
Cascade image intensifier
Microchannel plate image intensifier
third generation image intensifier
X-ray image intensifier
camera tube
camera tube definition
An imaging device that records and converts optical images based on spatial light intensity distribution into video signals
The camera tube has three basic functions
Photoelectric conversion
Accumulation of photoelectric information
Save and scan output
Characteristic parameters of camera tube
Sensitivity
Photoelectric conversion characteristics
resolution
Chapter 7 Solid Imaging Devices
Classification:
Charge coupled device, CCD for short
Self-scanning photodiode array, referred to as SSPD, SSPD is also called MOS image sensor
Advantages of solid-state imaging devices compared with vacuum imaging devices:
(1) Small size, light weight, low power consumption; impact resistance, high reliability and long life;
(2) There is no pixel burn or distortion, and no interference from electromagnetic fields;
(3) The spectral response range of SSPD is from 0.25 to 1.1µm; it is also sensitive to near-infrared rays; CCD can also be made into infrared-sensitive type;
(4) The pixel size accuracy is better than 1µm and the resolution is high;
(5) Non-contact displacement measurement is possible;
(6) Basically no residual images are retained (vacuum camera tubes have 15% to 20% residual images)
(7) It is easy to interface the video signal with the microcomputer
Charge Coupled Device (CCD)
CCD composition
Signal input part
charge transfer part
Signal output part
Characteristics of CCD
Use charge as a signal, not current or voltage as a signal
charge coupling principle
For semiconductor devices, when a positive voltage is applied to the metal electrode, the holes close to the semiconductor surface are repelled and electrons increase, leaving only acceptor ions within a certain range under the surface, forming a depletion region. This area is a trap for electrons. A region with very low potential energy, also called a potential well. The higher the voltage applied to the gate, the higher the surface potential, and the deeper the potential well. If the applied voltage is constant, the depth of the potential well decreases linearly with the increase in the amount of charge in the potential well.
The difference between BCCD and SCCD:
(1) SCCD has a large signal processing capability (twice as large under similar conditions). The effective distance from the charge packet to the electrode in BCCD is large, which reduces the effective capacitance and also reduces the signal processing capability.
(2) BCCD has a larger edge electric field and higher carrier mobility, which shortens the carrier transit time and increases the upper limit of operating frequency, which is an order of magnitude higher than SCCD.
(3) The transfer channel of BCCD is in the semiconductor, which avoids the trapping effect of surface states and greatly improves the transfer efficiency.
(4) For two-phase BCCD, charges are stored under the thick gate, and the thin gate is the transfer gate; in SCCD, charges are stored under the thin gate, and the thick gate is the transfer gate.
SCCD has simple process and large signal processing capacity; BCCD’s biggest advantage is low noise and is ideal under low illumination.
CCD camera
Visible light CCD
Infrared CCD
X-ray CCD
UV CCD
How CCD is exposed to light
front light
Backside light
Chapter 8 Infrared Radiation and Infrared Detectors
infrared radiation
Infrared radiation, commonly known as infrared ray (IR), is a type of light invisible to the human eye
Infrared radiation, like all electromagnetic waves, propagates in straight lines in space in the form of waves.
The speed of light in a vacuum is equal to the speed of light in a vacuum
Infrared Detectors
Classification
heat detector
Thermal detector is a detector that uses the detection element to absorb infrared radiation energy to cause temperature rise. On this basis, it uses various physical effects to convert the temperature rise into electricity.
photon detector
Photon-type infrared detectors use certain semiconductor materials to produce photoelectric effects under the irradiation of infrared radiation, which changes the electrical properties of the materials. By measuring the changes in electrical properties, the intensity of infrared radiation can be determined.
Performance parameters
Voltage response rate
Spectral response
equivalent noise power
specific detection rate
time constant
Principle of infrared temperature measurement
Stephan-Boltzmann law
Characteristics of infrared temperature measurement
Infrared temperature measurement has fast response speed
High sensitivity of infrared temperature measurement
Infrared temperature measurement is a non-contact temperature measurement
Infrared temperature measurement has high accuracy
Chapter 9 Optical Fibers and Fiber Optic Sensors
optical fiber
The structure of optical fiber
core
layers
coat
Classification
step type
gradient type
Characterizing the characteristic parameters of optical signals passing through optical fibers
Transmission loss
dispersion
capacity
tensile strength
light gathering ability
Fiber Optic Sensor
Functional type (sensing type)
Features
It has very high sensitivity, especially fiber optic sensors that use various interference techniques to measure the phase changes of light.
Classification
Phase modulated fiber optic sensor
Light intensity modulated optical fiber sensor
Polarization modulation fiber optic sensor
Non-functional type (light transmission type)
Features
The structure is simple, reliable, and technically easy to implement, but its sensitivity and measurement accuracy are generally lower than functional optical fiber sensors.
Classification:
Transmitted light intensity modulated optical fiber sensor
Reflected light intensity modulated optical fiber sensor
Frequency modulated fiber optic sensor
Fiber optic liquid level sensor